Micron MT40A512M16TB-062E:R 8Gb DDR4 SDRAM

Micron MT40A512M16TB-062E:R 8Gb DDR4 SDRAM

Micron MT40A512M16TB-062E:R is an 8Gb DDR4 SDRAM memory chip featuring a 512M x 16 organization. Delivering high data bandwidth and energy efficiency at DDR4-3200 speeds, it is engineered for industrial controls, enterprise networking equipment, and high-performance embedded systems.

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MT40A512M16TB-062E:R Specifications

Parameter / Metric

Official Specification

Manufacturer

Micron Technology

Part Number (MPN)

MT40A512M16TB-062E:R

Product Category

DRAM (Dynamic RAM)

Memory Type

DDR4 SDRAM

Total Density / Capacity

8Gb (1,073,741,848 bits / 1GB)

Memory Organization

512M x 16 (512 Megabytes wide)

Speed Grade / Data Rate

3200 MT/s (-062E)

Clock Frequency

1.6 GHz

CAS Latency (CL)

CL22

Write Recovery Time (tWR)

Programmed via Mode Register

Supply Voltage (VDD / VDDQ)

1.2V (Min: 1.14V, Max: 1.26V)

VPP Supply Voltage

2.5V (Min: 2.375V, Max: 2.75V)

Operating Current (IDD)

Low-power design per JEDEC standards

Operating Temperature Range

0°C to +95°C (Commercial)

Storage Temperature Range

-55°C to +100°C

Package / Case

96-Ball FBGA (Fine-Pitch Ball Grid Array)

Ball Pitch / Dimensions

Standard pitch layout

Mounting Type

Surface Mount (SMD)

Interface Type

Parallel

Bus Width

16-bit

Architecture

8n-prefetch

Moisture Sensitivity Level (MSL)

Level 3 (168 hours)

RoHS Status

RoHS Compliant / Halogen-Free

Revision / Suffix

Revision R (:R)